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| ST230SPBF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 230 A FEATURES * Center amplifying gate * International standard case TO-209AB (TO-93) * Hermetic metal case with ceramic insulator COMPLIANT (Also available with glass-metal seal up to 1200 V) RoHS * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) * Lead (Pb)-free * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 230 A * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Typical 50 Hz 60 Hz 50 Hz 60 Hz TEST CONDITIONS VALUES 230 TC 85 360 5700 5970 163 149 400 to 1600 100 - 40 to 125 UNITS A C A A kA2s V s C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST230S 08 12 16 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 1600 VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA 500 900 1300 1700 30 Document Number: 94399 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST230SPBF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 230 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 78 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Maximum (typical) latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 230 85 360 5700 5970 4800 Sinusoidal half wave, initial TJ = TJ maximum 5000 163 148 115 105 1630 0.92 0.98 0.88 0.81 1.55 600 1000 (300) kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 100 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 30 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94399 Revision: 11-Aug-08 ST230SPBF Series Phase Control Thyristors (Stud Version), 230 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 90 40 2.9 1.8 1.2 10 VALUES TYP. MAX. UNITS Vishay High Power Products 10.0 2.0 3.0 20 5.0 150 3.0 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthC-hs DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.10 K/W 0.04 31 (275) 24.5 (210) 280 UNITS C N*m (lbf in) g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 Note SINUSOIDAL CONDUCTION 0.016 0.019 0.025 0.036 0.060 RECTANGULAR CONDUCTION 0.012 0.020 0.027 0.037 0.060 TJ = TJ maximum K/W TEST CONDITIONS UNITS Document Number: 94399 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST230SPBF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 230 A * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Cas T e emperature (C) 130 S 230S S T eries RthJC (DC) = 0.1 K/ W 120 Maximum Allowable Case Temperature (C) 130 120 110 Conduction Period S T230SS eries RthJC (DC) = 0.1 K/ W 110 Conduction Angle 100 90 30 80 70 0 100 200 60 100 90 60 30 80 0 50 100 150 200 250 Average On-state Current (A) 90 120 180 90 120 180 300 DC 400 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 350 300 250 180 120 90 60 30 RMSLimit h Rt 0. 16 SA K/ W 1 0. W K/ = 08 0. 0. 2 W K/ 200 150 0.3 K/ W 0.4 K/ W 0.5 K/ W K/ W ta el -D R Conduction Angle 100 50 0 0 50 100 150 200 S 230S S T eries TJ = 125C 0.8 K/ W 1.2 K /W 250 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Pow er Loss (W) 450 400 350 300 250 200 RMSLimit 150 100 50 0 0 50 100 150 200 250 300 350 400 25 Conduction Period DC 180 120 90 60 30 R 0. 1 th SA = 08 0. S T230SS eries T = 125C J K/ W 0.2 K/ W 0.3 K/ W 0.4 K/ W 0.5 K/ W 0.8 K/ W 0. 16 K/ W W K/ ta el -D R 1.2 K/ W 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94399 Revision: 11-Aug-08 ST230SPBF Series Phase Control Thyristors (Stud Version), 230 A Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine Vishay High Power Products 5500 5000 4500 4000 3500 3000 2500 2000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 6000 5500 Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J 5000 No Voltage R eapplied Rated VRRM R eapplied 4500 4000 3500 3000 2500 2000 0.01 S 230SS T eries S 230S S T eries 10 100 0.1 Pulse T rain Duration (s) 1 Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) 1000 100 Tj = 25C Tj = 125C ST230S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (K/ W) 1 S teady S tate Value RthJC = 0.1 K/ W (DC Operation) 0.1 0.01 S 230S S T eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94399 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST230SPBF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 230 A 100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Devic e: S 230SS T eries 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 23 2 - 0 3 S 4 16 5 P 6 0 7 V 8 PbF 9 Thyristor Essential part number 0 = Converter grade S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 3/4"-16UNF2A threads 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) - V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) Lead (Pb)-free Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95077 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94399 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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